日韩精品一区二区三区l|午夜精品久久一区二区三区…|午夜久久久久久久久久一区二区|免费视频观看在线一区二区三区

咨詢熱線

13761090949

當前位置：首頁   >  產品中心  >  二維材料  >  硒化物晶體  >  SnSe 硒化錫晶體 （Tin Selenide）

SnSe 硒化錫晶體 （Tin Selenide）

簡要描述：In the bulk form SnSe has band-gap at around 0.9 eV （indirect） and 1.25 direct gaps. It has layered structure （lamellar） with weak interlayer coupling, enabling to isolate down to monolayers.

  • 產品型號：
  • 廠商性質：生產廠家
  • 更新時間：2024-06-03
  • 訪  問  量：1128

詳細介紹

In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.

SnSe single crystal characteristics

In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.

SnSe single crystal characteristics

 

產品咨詢

留言框

  • 產品：

  • 您的單位：

  • 您的姓名：

  • 聯(lián)系電話：

  • 常用郵箱：

  • 省份：

  • 詳細地址：

  • 補充說明：

  • 驗證碼：

    請輸入計算結果（填寫阿拉伯數(shù)字），如：三加四=7

聯(lián)系我們

上海巨納科技有限公司 公司地址：上海市虹口區(qū)寶山路778號海倫國際大廈5樓   技術支持：化工儀器網(wǎng)
  • 聯(lián)系人：袁文軍
  • QQ：494474517
  • 公司座機：86-021-56830191
  • 郵箱：[email protected]

掃一掃 更多精彩

微信二維碼

網(wǎng)站二維碼