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簡要描述:晶體尺寸:10毫米電學(xué)性能:金屬,電荷密度波(CDW)(TCDW ~ 170K)晶體結(jié)構(gòu):單斜晶晶胞參數(shù):a = 1.479nm,B = 0.364nm,C = 0.934nm,α=γ= 90°,β= 110.71晶體類型:合成晶體純度:>99.995%表征方法:XRD、拉曼、EDX
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晶體尺寸:10毫米
電學(xué)性能:金屬,電荷密度波(CDW)(TCDW ~ 170K)
晶體結(jié)構(gòu):單斜晶
晶胞參數(shù):a = 1.479nm,B = 0.364nm,C = 0.934nm,α=γ= 90°,β= 110.71
晶體類型:合成
晶體純度:>99.995%
表征方法:XRD、拉曼、EDX
X-ray diffraction on a TaTe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker.
Powder X-ray diffraction (XRD) of a single crystal TaTe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal TaTe2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal TaTe2. Measurement was performed with a 785 nm Raman system at room temperature.
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